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FGL60N100BNTD
IGBT
FGL60N100BNTD
NPT-Trench IGBT
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications
Features
* * * * High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode
Application
Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance
C
G
TO-264
G C E
TC = 25C unless otherwise noted
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
FGL60N100BNTD 1000 25 60 42 120 15 180 72 -55 to +150 -55 to +150 300
Units V V A A A A W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.69 2.08 25 Units C/W C/W C/W
(c)2004 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. A
FGL60N100BNTD
Electrical Characteristics of IGBT
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES ICES IGES Collector Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 1mA VCE = 1000V, VGE = 0V VGE = 25, VCE = 0V 1000 ------1.0 500 V mA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 60mA, VCE = VGE IC = 10A, VGE = 15V IC = 60A, VGE = 15V 4.0 --5.0 1.5 2.5 7.0 1.8 2.9 V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=10V, VGE = 0V, f = 1MHz ---6000 260 200 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC = 60A, RG = 51, VGE=15V, Resistive Load, TC = 25C VCE = 600 V, IC = 60A, VGE = 15V , , TC = 25C -------140 320 630 130 275 45 95 ---250 350 --ns ns ns ns nC nC nC
Electrical Characteristics of DIODE T
Symbol VFM trr IR Parameter Diode Forward Voltage Diode Reverse Recovery Time Instantaneous Reverse Current
C
= 25C unless otherwise noted
Test Conditions IF = 15A IF = 60A IF = 60A di/dt = 20 A/us VRRM = 1000V
Min. ----
Typ. 1.2 1.8 1.2 0.05
Max. 1.7 2.1 1.5 2
Units V V us uA
(c)2004 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. A
FGL60N100BNTD
100
Common Emitter TC = 25
80
20V 15V 10V 9V
90
8V
80 70
Common Emitter VGE = 15V TC = 25 TC = 125 ------
TC = 25 TC = 125
Collector Current, I C [A]
Collector Current, I C [A]
5
60 50 40 30 20 10 0 0 1 2 3
60
40 7V 20 VGE = 6V 0 1 2 3 4
0
4
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
10
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE=15V 3 80A 60A
Common Emitter O T C= - 40 C
Collector-Emitter Voltage, VCE[V]
8
6
2
30A
4
30A 60A 80A
IC=10A 1 -50 0 50 100 150
2 IC=10A 0 4 8 12 16 20
Case Temperature, TC []
Gate-Emitter Voltage, V GE [V]
Fig 3. Saturation Voltage vs. Case Temperature at Varient Current Level
Fig 4. Saturation Voltage vs. VGE
10
Common Emitter TC = 25
10
Common Emitter TC = 125
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
8
8
6 30A 4 60A 80A 2 IC = 10A 0 4 8 12 16 20
6
30A 60A 80A
4
2 IC = 10A 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2004 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
FGL60N100BNTD Rev. A
FGL60N100BNTD
10000
Cies
10000 V CC =600V, I C =60A V G E = 15V T C =25 C
o
Capacitance [pF]
Tdoff Tr Tdon Tf
Coes 100 Common Emitter VGE = 0V, f = 1MHz T C = 25 0 5 10 15 20 25 30 Cres
Switching Time [ns]
1000
1000
100
10 0 50 100 150 200
Collector-Emitter Voltage, VCE [V]
G ate R esistance, R G [ ]
Fig 7. Capacitance Characteristics
Fig 8. Switching Characteristics vs. Gate Resistance
20
1000 V CC= 6 0 0 V , R g = 5 1 V G E = 1 5 V , TC = 2 5
Common Emitter VCC=600V, RL=10 TC=25
Switching Time [ns]
T d o ff
Gate-Emitter Voltage,VGE [V]
15
10
Tf Tr
5
100
Tdon
0
10 20 30 40 50 60
0
50
100
150
200
250
300
C o lle c to r C u rre n t, I C [A ]
Gate Charge, Qg [nC]
Fig 9. Switching Characteristics vs. Collector Current
Fig 10. Gate Charge Characteristics
10
50us 100us
Thermal Response, ZTHJC [/W]
100
IC MAX. (Pulsed) IC MAX. (Continuous)
Collector Current , I C [A]
1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 10
-4
10 1ms DC Operation
1
Single Nonrepetitive Pulse TC = 25 Curve must be darated linearly with increase in temperature 1 10 100 1000
0.1
1E-3
10
-3
10
-2
10
-1
10
0
10
1
Collector-Emitter Voltage, VCE [V]
Rectangular Pulse Duration [sec]
Fig 11. SOA Characteristics
Fig 12. Transient Thermal Impedance of IGBT
(c)2004 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. A
FGL60N100BNTD
100
1.2 IF=60A TC=25
120
Reverse Recovery Time, trr [ ]
1.0
100
Reverse Recovery Current Irr [A]
Forward Current, IF[A]
10
T C = 100
0.8 trr 0.6
80
T C = 25 1
60
0.4
40
0.2
Irr
20
0.1 0.0 0.5 1.0 1.5 2.0 2.5
0.0 0 40 80 120 160 200
0 240
Forward Voltage, V FM [V]
di/dt [A/ ]
Fig 13. Forward Characteristics
Fig 14. Reverse Recovery Characteristics vs. di/dt
1.2
Reverse Recovery Time, trr [ ]
di/dt=-20A/ TC=25
12
1000 100
Reverse Recovery Current Irr [A]
trr
Reverse Current, IR [uA]
1.0
10
T C = 150
10 1 0.1 0.01 1E-3 0 300 600 900 T C= 25
0.8
Irr
8
0.6
6
0.4
4 10 20 30 40 50 60
Forward Current, IF [A]
Reverse Voltage, V R [V]
Fig 15. Reverse Recovery Characteristics vs. Forward Current
Fig 16. Reverse Current vs. Reverse Voltage
250
TC = 25
200
Capacitance, Cj [pF]
150
100
50
0 0.1 1 10 100
Reverse Voltage, VR [V]
Fig 17. Junction capacitance
(c)2004 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. A
FGL60N100BNTD
Package Dimension
TO-264
6.00 0.20 20.00 0.20 (4.00) (8.30) (8.30) (1.00) (2.00)
(9.00)
(9.00)
(11.00)
(0.50) 20.00 0.20 2.50 0.10
1.50 0.20
(R1
(7.00)
(7.00)
4.90 0.20 (1.50) 2.50 0.20 (1.50) 3.00 0.20 1.00 -0.10
+0.25
(2.00)
20.00 0.50
(R 2.0
o3.3 0 0
.20
.00
0)
)
(1.50)
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.10
+0.25
2.80 0.30
5.00 0.20
3.50 0.20
(0.15)
(1.50)
(2.80)
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation FGL60N100BNTD Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
FACT Quiet SeriesTM ACExTM FAST(R) ActiveArrayTM BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM HiSeCTM E2CMOSTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM
POPTM Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I8

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